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| Datasheet File OCR Text: |
| geometry principal device type cmpdm7002ae gross die per 6 inch wafer 95,200 process CP328X small signal mosfet transistor n-channel enhancement-mode mosfet chip process details die size 15.7 x 15.7 mils die thickness 5.5 mils gate bonding pad area 3.9 x 3.9 mils source bonding pad area 9.1 x 8.1 mils top side metalization al-si 30,000? back side metalization au - 9,000? www.centralsemi.com r0 (31-october 2012)
process CP328X typical electrical characteristics www.centralsemi.com r0 (31-october 2012) |
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